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STD1955NL датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STD1955NL
подробное описание детали  N-Channel E nhancement Mode Field Effect Transistor
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STD1955NL датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BVDSS
=
VGS 0V, ID 250uA
=
55
V
Zero Gate Voltage Drain Current
IDSS
VDS 44V, VGS 0V
=
=
1
Gate-Body Leakage
IGSS
VGS 20V, VDS 0V
=
=
100 nA
ON CHAR ACTER ISTICS b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = 250uA
=
1.0
3.0
V
Drain-Source On-State R esistance
R DS(ON)
VGS 10V, ID 8A
VGS 4.5V, ID 4A
65
80
On-State Drain Current
ID(ON)
VDS = 5V, VGS = 10V
A
S
Forward Transconductance
FS
g
VDS 10V, ID 8A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =30V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 30V
ID = 8 A
VGS = 10V
R GEN = 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =15V, ID = 8A
VGS =10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
55
uA
m ohm
m ohm
N-Channel ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
VDS =15V, ID =8A,VGS =10V
nC
VDS =15V, ID =8A,VGS =5V
15
50
75
635
12.8
9.8
14.5
5.3
10.6
3.8
2.6
7.1
10
ohm
R g
Gate resistance
VGS =0V, VDS = 0V, f=1.0MHZ
718
87
57
2.6
13
6
17
11
14
8
3
5
S T U/D1955NL
1.9
42


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