BC850C datasheet(1/4 Pages) ETL

номер детали	BC850C

подробное описание детали	General Purpose Transistors

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M3–1/4

General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

BC847

BC848

Rating

Symbol

BC846

BC850

BC849

Unit

Collector–Emitter Voltage

V CEO

65

45

30

V

Collector–Base Voltage

V CBO

80

50

30

V

Emitter–Base Voltage

V EBO

6.0

5.0

V

Collector Current — Continuous

I C

100

mAdc

Collector Current(Peak value)

I CM

200

mAdc

Emitter Current(Peak value)

I EM

200

mAdc

Base Current(Peak value)

I BM

200

mAdc

SOLDERING CHARACTERISTICS

Characteristic

Symbol

Unit

Solder Heat Resistance

265

°C

Solderability

240 to 265

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

TA = 25°C

225

mW

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθθθθθJA

556

°C/W

Total Device Dissipation

PD

Alumina Substrate, (2) TA = 25°C

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθθθθθJA

417

°C/W

Junction and Storage Temperature

TJ , Tstg

–55 to +150

°C

DEVICE MARKING

BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;

BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

BC846A,B

65

—

(IC = 10 mA)

BC847A,B,C, BC850B,C

V(BR)CEO

45

—

v

BC848A,B,C, BC849B,C

30

—

Collector–Emitter Breakdown Voltage

BC846A,B

80

—

(IC = 10 µA, VEB = 0)

BC847A,B,C, BC850B,C

V(BR)CES

50

—

v

BC848A,B,C, BC849B,C

30

—

Collector–Base Breakdown Voltage

BC846A,B

80

—

(IC = 10 µA)

BC847A,B,C, BC850B,C

V(BR)CBO

50

—

v

BC848A,B,C, BC849B,C

30

—

Emitter–Base Breakdown Voltage

BC846A,B

BC847A,B,C

6.0

(IE = 1.0 µA)

BC848A,B,C, BC849B,C,

V(BR)EBO

5.0

BC850B,C

5.0

Collector Cutoff Current

(VCB = 30 V)

ICBO

——

15

nA

(VCB = 30 V, TA = 150°C)

—

5.0

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

BC846ALT1,BLT1

BC847ALT1,BLT1

CLT1 thru

BC850BLT1,CLT1

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

2

EMITTER

3

COLLECTOR

1

BASE

1

3

2

Аналогичный номер детали - BC850C

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BC850C	46Kb / 8P	NPN general purpose transistors 1999 Apr 08
Formosa MS	BC850C	121Kb / 9P	SMD NPN Transistor
Siemens Semiconductor G...	BC850C	273Kb / 8P	NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
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