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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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1PS79SB40 датащи(PDF) 4 Page - NXP Semiconductors |
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1PS79SB40 датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  1999 Apr 26 4 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 GRAPHICAL DATA Fig.2 Forward current as a function of forward voltage; typical values. (1) Tamb = 150 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. (4) Tamb = −40 °C. handbook, halfpage 10 2 10 1 10 2 0 MLC361 - 1 0.6 0.8 0.4 0.2 1.0 V (V) 10 1 I F (mA) F (1) (2) (3) (4) Fig.3 Reverse current as a function of reverse voltage; typical values. (1) Tamb = 150 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 103 102 10−1 10−2 10 1 0 MLC362 20 10 40 30 VR (V) IR ( µA) (1) (2) (3) Fig.4 Differential forward resistance as a function of forward current; typical values. f = 10 KHz. handbook, halfpage MLC364 110 10 2 1 10 3 10 102 10 1 r diff ( Ω) I (mA) F Fig.5 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C. handbook, halfpage 010 20 40 30 5 0 4 MLC363 3 2 1 VR (V) Cd (pF) |
Аналогичный номер детали - 1PS79SB40 |
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Аналогичное описание - 1PS79SB40 |
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