поискавой системы для электроныых деталей |
|
2PB1219AS датащи(PDF) 3 Page - NXP Semiconductors |
|
2PB1219AS датащи(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 12 3 Philips Semiconductors Product specification PNP general purpose transistor 2PB1219A THERMAL CHARACTERISTICS Note 1. Refer to SOT323; SC70 standard mounting conditions. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −20 V −−100 nA IE = 0; VCB = −20 V; Tj = 150 °C −−5 µA IEBO emitter cut-off current IC = 0; VEB = −4V −−100 nA hFE DC current gain IC = −150 mA; VCE = −10 V; note 1 2PB1219AQ 85 170 2PB1219AR 120 240 2PB1219AS 170 340 hFE DC current gain IC = −500 mA; VCE = −10 V; note 1 40 − VCEsat collector-emitter saturation voltage IC = −300 mA; IB = −30 mA; note 1 −−600 mV VBEsat base-emitter saturation voltage IC = −300 mA; IB = −30 mA; note 1 −−1.5 V Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz − 15 pF fT transition frequency IC = 50 mA; VCE = −10 V; f = 100 MHz; note 1 2PB1219AQ 100 − MHz 2PB1219AR 120 − MHz 2PB1219AS 140 − MHz |
Аналогичный номер детали - 2PB1219AS |
|
Аналогичное описание - 2PB1219AS |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |