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GS8161FZ32BD-5.5I датащи(PDF) 1 Page - GSI Technology

номер детали GS8161FZ32BD-5.5I
подробное описание детали  18Mb Flow Through Synchronous NBT SRAM
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производитель  GSI [GSI Technology]
домашняя страница  http://www.gsitechnology.com
Logo GSI - GSI Technology

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GS8161FZ18/32/36BD
18Mb Flow Through
Synchronous NBT SRAM
5.5 ns–7.5 ns
2.5 V or 3.3 V VDD
2.5 V or 3.3 V I/O
165-Bump BGA
Commercial Temp
Industrial Temp
Rev: 1.00 6/2006
1/28
© 2006, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Features
• Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with flow through NtRAM™, NoBL™
and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 165-bump FP-BGA package
• RoHS-compliant 165-bump BGA package available
Functional Description
The GS8161FZ18/32/36BD is an 18Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other flow through read/single late write SRAMs, allow
utilization of all available bus bandwidth by eliminating the
need to insert deselect cycles when the device is switched from
read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8161FZ18/32/36BD is configured to operate in Flow
Through mode.
The GS8161FZ18/32/36BDis implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 165-bump FP-BGA package.
Parameter Synopsis
-5.5
-6.5
-7.5
Unit
Flow Through
2-1-1-1
tKQ
tCycle
5.5
5.5
6.5
6.5
7.5
7.5
ns
ns
Curr (x18)
Curr (x32/x36)
225
255
200
220
185
205
mA
mA


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