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GS8162V72CGC-250I датащи(PDF) 11 Page - GSI Technology

номер детали GS8162V72CGC-250I
подробное описание детали  256K x 72 18Mb S/DCD Sync Burst SRAMs
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производитель  GSI [GSI Technology]
домашняя страница  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS8162V72CGC-250I датащи(HTML) 11 Page - GSI Technology

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GS8162V72CC-333/300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
11/29
© 2004, GSI Technology
Note:
These parameters are sample tested.
Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
VDD + 0.3
V1
VDD Input Low Voltage
VIL
–0.3
0.3*VDD
V1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
VDDQ + 0.3
V1,3
VDDQ I/O Input Low Voltage
VILQ
–0.3
0.3*VDD
V1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
45
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
67
pF
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 2.0 V
50%
VDD
VIL


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