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H02N60SJ датащи(PDF) 1 Page - Hi-Sincerity Mocroelectronics

номер детали H02N60SJ
подробное описание детали  N-Channel Power Field Effect Transistor
Download  6 Pages
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производитель  HSMC [Hi-Sincerity Mocroelectronics]
домашняя страница  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics

H02N60SJ датащи(HTML) 1 Page - Hi-Sincerity Mocroelectronics

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 1/6
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
I
D
Drain to Current (Continuous)
2
A
I
DM
Drain to Current (Pulsed)
8
A
V
GS
Gate-to-Source Voltage (Continue)
±30
V
Total Power Dissipation (T
C=25
oC)
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
50
50
25
W
P
D
Derate above 25
°C
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
0.4
0.4
0.33
W/
°C
T
j, Tstg
Operating and Storage Temperature Range
-55 to 150
°C
E
AS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
°C
(V
DD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω)
35
mJ
T
L
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
260
°C
H02N60S Series Pin Assignment
1
2
3
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Tab
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Tab
1
2
3
Tab
H02N60S Series
Symbol:
G
D
S


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