поискавой системы для электроныых деталей |
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74AHCT1G07GV датащи(PDF) 2 Page - NXP Semiconductors |
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74AHCT1G07GV датащи(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 2002 Oct 02 2 Philips Semiconductors Product specification Buffer with open-drain output 74AHC1G07; 74AHCT1G07 FEATURES • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. • Low power dissipation • SOT353 and SOT753 packages • Output capability standard (open-drain) • Specified from −40 to +125 °C. DESCRIPTION The 74AHC1G/AHCT1G07 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G07 provides the non-inverting buffer. The output of the 74AHC1G/AHCT1G07 devices is open-drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. FUNCTION TABLE See note 1. Note 1. H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT AHC1G AHCT1G tPZL propagation delay A to Y CL = 15 pF; VCC = 5 V 2.5 2.8 ns tPLZ propagation delay A to Y CL = 15 pF; VCC = 5 V 4.2 3.9 ns CI input capacitance 1.5 1.5 pF CPD power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 5 6.5 pF INPUT OUTPUT AY LL HZ |
Аналогичный номер детали - 74AHCT1G07GV |
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Аналогичное описание - 74AHCT1G07GV |
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