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IRF4905PBF датащи(PDF) 2 Page - International Rectifier

номер детали IRF4905PBF
подробное описание детали  HEXFET Power MOSFET
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF4905PBF датащи(HTML) 2 Page - International Rectifier

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IRF4905PbF
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.6
V
TJ = 25°C, IS = -38A, VGS = 0V
trr
Reverse Recovery Time
–––
89
130
ns
TJ = 25°C, IF = -38A
Qrr
Reverse Recovery Charge
––– 230
350
nC
di/dt = -100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.05 –––
V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.02
VGS = -10V, ID = -38A
VGS(th)
Gate Threshold Voltage
-2.0
––– -4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
21
–––
–––
S
VDS = -25V, ID = -38A
–––
–––
-25
µA
VDS = -55V, VGS = 0V
–––
––– -250
VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
180
ID = -38A
Qgs
Gate-to-Source Charge
–––
–––
32
nC
VDS = -44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
86
VGS = -10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
18
–––
VDD = -28V
tr
Rise Time
–––
99
–––
ID = -38A
td(off)
Turn-Off Delay Time
–––
61
–––
RG = 2.5Ω
tf
FallTime
–––
96
–––
RD = 0.72Ω, See Fig. 10
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 3400 –––
VGS = 0V
Coss
Output Capacitance
––– 1400 –––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
640
–––
ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 1.3mH
RG = 25Ω, IAS = -38A. (See Figure 12)
Pulse width
≤ 300µs; duty cycle ≤ 2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-74
-260


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