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CDNBS16-T03 датащи(PDF) 1 Page - Bourns Electronic Solutions |
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CDNBS16-T03 датащи(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page CDNBS16-T03~T36C – TVS Diode Array Series Features ■ Lead free device (RoHS Compliant*) ■ Protects 8 lines ■ Unidirectional & bidirectional configurations ■ ESD protection Applications ■ Audio/video inputs ■ RS-232, RS-422 & RS-423 data lines ■ Portable electronics ■ Medical sensors General Information Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD protection applications, in 16 Lead Narrow Body SOIC package size format. The Transient Voltage Suppressor Array series offer a choice of voltage types ranging from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. Parameter Symbol Max. Unit Operating Temperature TJ -55 to +150 °C Storage Temperature TSTG -55 to +150 °C Notes: 1. See Pulse Wave Form. 2. See Peak Pulse Power vs. Pulse Time. 3. Only applies to unidirectional devices. 4. Part numbers with a “C” suffix are bidirectional devices, i.e., CDNBS16-T03C. 16 15 14 13 UNIDIRECTIONAL 12 11 10 9 1 2 3 4 5 6 7 8 16 15 14 13 BIDIRECTIONAL 12 11 10 9 1 2 3 4 5 6 7 8 Parameter Symbol CDNBS16- Unit Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C Break Down Voltage @ 1 mA VBR 4.5 6.0 8.5 13.3 16.7 26.7 40.0 V Working Peak Voltage VWM 3.0 5.0 8.0 12.0 15.0 24.0 36.0 V Maximum Clamping Voltage VC @ IP = 1 A1 VF 7.0 9.8 13.4 19.0 25.5 40.0 53.0 V Maximum Clamping Voltage @ 8/20 µs VC @ IPP1 VF 23 V @ 43 A 24 V @ 42 A 26 V @ 30 A 33 V @ 21 A 39 V @ 15 A 57 V @ 10 A 72 V @ 7 A V Maximum Leakage Current @ VWM ID 125 20 10 2 2 2 2 µA Maximum Capacitance @ 0 V, 1 MHz Cj(SD) 15 pF Temperature Coefficient of VBR -3 3 9 16 17 26 36 mV/°C Peak Pulse Power (tp = 8/20 µs)2 PPP 500 W Forward Voltage @ 100 mA, 300 µs – Square Wave3 VF 1.5 V *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. |
Аналогичный номер детали - CDNBS16-T03 |
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Аналогичное описание - CDNBS16-T03 |
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