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CDNBS16-T03 датащи(PDF) 1 Page - Bourns Electronic Solutions

номер детали CDNBS16-T03
подробное описание детали  CDNBS16-T03~T36C - TVS Diode Array Series
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производитель  BOURNS [Bourns Electronic Solutions]
домашняя страница  http://www.bourns.com
Logo BOURNS - Bourns Electronic Solutions

CDNBS16-T03 датащи(HTML) 1 Page - Bourns Electronic Solutions

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CDNBS16-T03~T36C – TVS Diode Array Series
Features
Lead free device (RoHS Compliant*)
Protects 8 lines
Unidirectional & bidirectional
configurations
ESD protection
Applications
Audio/video inputs
RS-232, RS-422 & RS-423 data lines
Portable electronics
Medical sensors
General Information
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD
protection applications, in 16 Lead Narrow Body SOIC package size format. The
Transient Voltage Suppressor Array series offer a choice of voltage types ranging
from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns® Chip
Diodes conform to JEDEC standards, are easy to handle on standard pick and place
equipment and their flat configuration minimizes roll away.
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and
IEC 61000-4-5 (Surge) requirements.
Parameter
Symbol
Max.
Unit
Operating Temperature
TJ
-55 to +150
°C
Storage Temperature
TSTG
-55 to +150
°C
Notes:
1. See Pulse Wave Form.
2. See Peak Pulse Power vs. Pulse Time.
3. Only applies to unidirectional devices.
4. Part numbers with a “C” suffix are bidirectional devices, i.e., CDNBS16-T03C.
16
15
14
13
UNIDIRECTIONAL
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
BIDIRECTIONAL
12
11
10
9
1
2
3
4
5
6
7
8
Parameter
Symbol
CDNBS16-
Unit
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C
Break Down Voltage @ 1 mA
VBR
4.5
6.0
8.5
13.3
16.7
26.7
40.0
V
Working Peak Voltage
VWM
3.0
5.0
8.0
12.0
15.0
24.0
36.0
V
Maximum Clamping Voltage
VC @ IP = 1 A1
VF
7.0
9.8
13.4
19.0
25.5
40.0
53.0
V
Maximum Clamping Voltage
@ 8/20 µs VC @ IPP1
VF
23 V
@ 43 A
24 V
@ 42 A
26 V
@ 30 A
33 V
@ 21 A
39 V
@ 15 A
57 V
@ 10 A
72 V
@ 7 A
V
Maximum Leakage Current
@ VWM
ID
125
20
10
2
2
2
2
µA
Maximum Capacitance
@ 0 V, 1 MHz
Cj(SD)
15
pF
Temperature Coefficient
of VBR
-3
3
9
16
17
26
36
mV/°C
Peak Pulse Power
(tp = 8/20 µs)2
PPP
500
W
Forward Voltage @ 100 mA,
300 µs – Square Wave3
VF
1.5
V
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.


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