поискавой системы для электроныых деталей |
|
BAT754S датащи(PDF) 3 Page - NXP Semiconductors |
|
BAT754S датащи(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Aug 05 3 Philips Semiconductors Product specification Schottky barrier (double) diodes BAT754 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ≤ 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT23 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method − 600 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage see Fig.6 IF = 0.1 mA − 200 mV IF =1mA − 260 mV IF =10mA − 340 mV IF =30mA − 420 mV IF = 100 mA 600 − mV IR reverse current VR = 25 V; note 1; see Fig.7 − 2 µA Cd diode capacitance f = 1 MHz; VR = 1 V; see Fig.8 − 10 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
Аналогичный номер детали - BAT754S |
|
Аналогичное описание - BAT754S |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |