1999 May 31

2

Philips Semiconductors

Product specification

PNP general purpose transistors

BCX17; BCX18

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• Saturated switching and driver applications e.g. for

industrial service

• Thick and thin-film circuits.

DESCRIPTION

PNP transistor in a SOT23 plastic package.

NPN complement: BCX19.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

BCX17

T1

∗

BCX18

T2

∗

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM256

Top view

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BCX17

−−50

V

BCX18

−−30

V

collector-emitter voltage

open base

BCX17

−−45

V

BCX18

−−25

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−500

mA

peak collector current

−−1A

peak base current

−−200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C