1997 Mar 04

3

Philips Semiconductors

Product specification

PNP power transistor

BD132

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Refer to TO-126; SOT32 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−45

V

collector-emitter voltage

open base

−−45

V

emitter-base voltage

open collector

−−4V

collector current (DC)

−−3A

peak collector current

−−6A

peak base current

−−0.5

A

total power dissipation

−

15

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

100

K/W

thermal resistance from junction to mounting base

6

K/W