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BF1100WR датащи(PDF) 3 Page - NXP Semiconductors

номер детали BF1100WR
подробное описание детали  Dual-gate MOS-FET
Download  14 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF1100WR датащи(HTML) 3 Page - NXP Semiconductors

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1995 Apr 25
3
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
14
V
ID
drain current
30
mA
IG1
gate 1 current
−±10
mA
IG2
gate 2 current
−±10
mA
Ptot
total power dissipation
see Fig.2; up to Tamb =50 °C; note 1
280
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
+150
°C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
300
0
MLD180
150
200
100
Ptot
(mW)
T
( C)
amb
o
Fig.3
Forward transfer admittance as a function
of junction temperature; typical values.
50
0
50
150
40
0
MLD156
100
30
20
10
Yfs
(mS)
T ( C)
j
o


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