поискавой системы для электроныых деталей |
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BF998WR датащи(PDF) 6 Page - NXP Semiconductors |
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BF998WR датащи(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 1997 Sep 05 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR Fig.7 Forward transfer admittance as a function of gate 1 voltage; typical values. VDS = 8 V; Tamb =25 °C. −11 30 0 6 MGC474 12 18 24 0 V (V) G1-S y fs (mS) 3 V 2 V 1 V 0 V V = 4 V G2 S Fig.8 Output capacitance as a function of drain-source voltage; typical values. VG2-S = 4 V; f = 1 MHz; Tamb =25 °C. 414 1.5 1.0 1.1 MGC475 1.2 1.3 1.4 6 8 10 12 VDS(V) Cos (pF) 12 mA 10 mA 8 mA ID = Fig.9 Gate 1 input capacitance as a function of gate 1-source voltage; typical values. VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb =25 °C. −2.4 −1.6 −0.8 0.8 2.4 1.4 2.2 MGC476 0 2.0 1.8 1.6 Cis (pF) V (mV) G1-S Fig.10 Gate 1 input capacitance as a function of gate 2-source voltage; typical values. VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb =25 °C. 64 2 −2 2.4 2.3 2.1 2.0 2.2 MGC477 0 Cis (pF) V (V) G2-S |
Аналогичный номер детали - BF998WR |
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Аналогичное описание - BF998WR |
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