1997 Sep 05

2

Philips Semiconductors

Product specification

N-channel dual-gate MOS-FET

BF998WR

FEATURES

• High forward transfer admittance

• Short channel transistor with high forward transfer

admittance to input capacitance ratio

• Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS

• VHF and UHF applications with 12 V supply voltage,

such as television tuners and professional

communications equipment.

DESCRIPTION

Depletion type field-effect transistor in a plastic

microminiature SOT343R package with source and

substrate interconnected. The transistor is protected

against excessive input voltage surges by integrated

back-to-back diodes between gates and source.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING

PIN

SYMBOL

DESCRIPTION

1

s, b

source

2

d

drain

gate 2

gate 1

Fig.1 Simplified outline (SOT343R) and symbol.

Marking code: MB.

MAM198

Top view

21

34

s,b

d

g

1

g

2

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

drain-source voltage

−−

12

V

drain current

−−

30

mA

total power dissipation

−−

300

mW

operating junction temperature

−−

150

°C

y

forward transfer admittance

−

24

−

mS

input capacitance at gate 1

−

2.1

−

pF

reverse transfer capacitance

f=1MHz

−

25

−

fF

F

noise figure

f = 800 MHz

−

1

−

dB