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FCA20N60S датащи(PDF) 1 Page - Fairchild Semiconductor |
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FCA20N60S датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCA20N60S REV. A1 SuperFETTM September 2006 FCA20N60S 600V N-Channel MOSFET Features •650V @TJ = 150°C • Typ. Rds(on)=0.22 Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. TO-3P FCA Series GS D D G S Absolute Maximum Ratings Symbol Parameter FCA20N60S Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 20 12.7 A A IDM Drain Current - Pulsed (Note 1) 60 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 26 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 260 2.1 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Thermal Characteristics Symbol Parameter FCA20N60S Unit RθJC Thermal Resistance, Junction-to-Case 0.48 °C/W RθJA Thermal Resistance, Junction-to-Ambient 41.7 °C/W *Drain current limited by maximum junction temperature |
Аналогичный номер детали - FCA20N60S |
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Аналогичное описание - FCA20N60S |
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