BUD43D2 datasheet(5/12 Pages) ONSEMI

номер детали	BUD43D2

подробное описание детали	Bipolar NPN Transistor

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BUD43D2

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Figure 7. Base–Emitter Saturation Region

IC/IB = 5

IC, COLLECTOR CURRENT (AMPS)

10

1

10

1

0.1

0.01

0.001

Figure 8. Base–Emitter Saturation Region

IC/IB = 10

0.1

IC, COLLECTOR CURRENT (AMPS)

10

1

10

1

0.1

0.01

0.001

0.1

Figure 9. Base–Emitter Saturation Region

IC/IB = 20

IC, COLLECTOR CURRENT (AMPS)

10

1

10

1

0.1

0.01

0.001

Figure 10. Forward Diode Voltage

0.1

REVERSE EMITTER–COLLECTOR CURRENT (AMPS)

10

1

10

1

0.1

0.01

0.1

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100

10

1

RBE

1000

800

1000

100

10

400

10

600

Figure 12. BVCER = f(RBE)

100

1000

900

500

700

TJ = 125°C

–20

°C

25

°C

TJ = 125°C

–20

°C

25

°C

TJ = 125°C

–20

°C

25

°C

VEC(V) = –20°C

125

°C

25

°C

Cib (pF)

Cob (pF)

TJ = 25°C

f(test) = 1 MHz

BVCER @ ICER = 10 mA

BVCER(sus) @ ICER = 200 mA,

LC = 25 mH

TC = 25°C

Аналогичный номер детали - BUD43D2

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BUD43B	112Kb / 4P	POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS
ON Semiconductor	BUD43B	155Kb / 4P	NPN Silicon Power Transistors August, 2006 ??Rev. 3

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Аналогичное описание - BUD43D2

производитель	номер детали	датащи	подробное описание детали
Microsemi Corporation	JAN2N2369A	75Kb / 2P	NPN BIPOLAR TRANSISTOR
Seme LAB	2N3767SMD05	21Kb / 2P	NPN BIPOLAR TRANSISTOR
Microsemi Corporation	2N1893	64Kb / 2P	NPN BIPOLAR TRANSISTOR
	2N3501	511Kb / 2P	NPN BIPOLAR TRANSISTOR
	2N3700	63Kb / 2P	NPN BIPOLAR TRANSISTOR
	2N2369A	63Kb / 2P	NPN BIPOLAR TRANSISTOR
Hi-Sincerity Mocroelect...	HSC5094	60Kb / 7P	NPN SILICON BIPOLAR TRANSISTOR
Advanced Semiconductor	AT41470	14Kb / 1P	NPN SILICON BIPOLAR TRANSISTOR
KODENSHI_AUK CORP.	SUT041N	402Kb / 6P	Dual NPN Bipolar transistor
TT Electronics.	BUX62	186Kb / 3P	SILICON NPN BIPOLAR TRANSISTOR

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