поискавой системы для электроныых деталей |
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KM62V256DLRGI-10L датащи(PDF) 7 Page - Samsung semiconductor |
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KM62V256DLRGI-10L датащи(HTML) 7 Page - Samsung semiconductor |
7 / 9 page KM62V256D, KM62U256D Family CMOS SRAM Revision 1.0 November 1997 7 TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled) Address CS tWC tWR(4) tAS(3) tDW tDH Data Valid WE Data in Data out High-Z High-Z tCW(2) tWP(1) tAW NOTES (WRITE CYCLE) 1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write to the end of write. 2. tCW is measured from the CS going low to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. DATA RETENTION WAVE FORM CS controlled VCC 3.0/2.7V 2.2V VDR CS GND Data Retention Mode CS ≥VCC - 0.2V tSDR tRDR TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled) Address CS tCW(2) tWR(4) tWP(1) tDW tDH tOW tWHZ Data Undefined Data Valid WE Data in Data out tWC tAW tAS(3) |
Аналогичный номер детали - KM62V256DLRGI-10L |
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Аналогичное описание - KM62V256DLRGI-10L |
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