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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LC78622NE датащи(PDF) 4 Page - Sanyo Semicon Device |
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LC78622NE датащи(HTML) 4 Page - Sanyo Semicon Device |
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4 / 31 page  No. 6015-4/31 LC78622NE Allowable Operating Ranges at Ta = 25°C, VSS = 0 V Parameter Symbol Conditions min typ max Unit VDD (1) VDD, XVDD, LVDD, RVDD, VVDD: 3.6 5.5 V During normal-speed playback Supply voltage VDD (2) VDD, XVDD, LVDD, RVDD, VVDD: 3.6 5.5 V During double-speed playback VIH (1) DEFI, COIN, RES, HFL, TES, SBCK, RWC, CQCK, Input high level voltage TAI, TEST1 to TEST5, CS, CONT1 to CONT5, PCCL 0.7 VDD VDD V VIH (2) EFMIN 0.6 VDD VDD V VIL (1) DEFI, COIN, RES, HFL, TES, SBCK, RWC, CQCK, Input low level voltage TAI, TEST1 to TEST5, CS, CONT1 to CONT5, PCCL 0 0.3 VDD V VIL (2) EFMIN 0 0.4 VDD V Data setup time tSU COIN, RWC: Figure 1 400 ns Data hold time tHD COIN, RWC: Figure 1 400 ns High level clock pulse width tWH SBCK, CQCK: Figures 1, 2 and 3 400 ns Low level clock pulse width tWL SBCK, CQCK: Figures 1, 2 and 3 400 ns Data read access time tRAC SQOUT, PW: Figures 2 and 3 0 400 ns Command transfer time tRWC RWC: Figure 1 1000 ns Subcode Q read enable time tSQE WRQ: Figure 2, with no RWC signal 11.2 ms Subcode read cycle time tSC SFSY: Figure 3 136 µs Subcode read enable time tSE SFSY: Figure 3 400 ns Port input data setup time tCSU CONT1 to CONT5, RWC: Figure 4 400 ns Port input data hold time tCHD CONT1 to CONT5, RWC: Figure 4 400 ns Port input clock setup time tRCQ RWC, CQCK: Figure 4 100 ns Port output data delay time tCDD CONT1 to CONT8, RWC: Figure 5 1200 ns Input level VIN (1) EFMIN: Slice level control 1.0 Vp-p VIN (2) XIN: Capacitor-coupled input 1.0 Vp-p Operating frequency range fop EFMIN 10 MHz Crystal oscillator frequency fX XIN, XOUT 16.9344 MHz Electrical Characteristics at Ta = 25°C, VDD = 5 V, VSS = 0 V Parameter Symbol Conditions min typ max Unit Current drain IDD VDD, XVDD, LVDD, RVDD, VVDD 25 35 mA DEFI, EFMIN, COIN, RES, HFL, TES, SBCK, Input high level current IIH (1) RWC, CQCK: TEST1: VIN = VDD 5 µA IIH (2) TAI, TEST2 to TEST5, CS, PCCL: VIN = VDD = 5.5 V 25 75 µA DEFI, EFMIN, COIN, RES, HFL, TES, SBCK, RWC, Input low level current IIL CQCK: TAI, TEST1 to TEST5, CS, PCCL: VIN = 0 V –5 µA EFMO, CLV+, CLV–, V/P, PCK, FSEQ, TOFF, VOH (1) TGL, JP+, JP–, EMPH/CONT6, EFLG, FSX: IOH = –1 mA 4 V MUTEL/CONT7, MUTER/CONT8, C2F, SBSY, PW, Output high level voltage VOH (2) SFSY, WRQ, SQOUT, TST11, 16M, 4.2M, CONT1 to 4 V CONT5: IOH = –0.5 mA VOH (3) DOUT: IOH = –12 mA 4.5 V EFMO, CLV+, CLV–, V/P, PCK, FSEQ, VOL (1) TOFF, TGL, JP+, JP–, EMPH/CONT6, EFLG, FSX: 1 V IOH = 1 mA Output low level voltage MUTEL/CONT7, MUTER/CONT8, VOL (2) C2F, SBSY, PW, SFSY, WRQ, SQOUT, 0.4 V TST11, 16M, 4.2M, CONT1 to CONT5: IOH = 2 mA VOL (3) DOUT: IOH = 12 mA 0.5 V IOFF (1) PDO, CLV+, CLV–, JP+, JP–, CONT1 to CONT5: 5 µA VOUT = VDD Output off leakage current IOFF (2) PDO, CLV+, CLV–, JP+, JP–, CONT1 to CONT5: –5 µA VOUT = 0 V Charge pump output current IPDOH PDO: RISET = 68 kΩ 64 80 96 µA IPDOL PDO: RISET = 68 kΩ –96 –80 –64 µA |
Аналогичный номер детали - LC78622NE |
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Аналогичное описание - LC78622NE |
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