поискавой системы для электроныых деталей |
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BTA151-500R датащи(PDF) 1 Page - NXP Semiconductors |
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BTA151-500R датащи(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Thyristors BTA151 series sensitive gate GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BTA151- 500R 650R 800R switching and phase control V DRM, Repetitive peak off-state 500 650 800 V applications. V RRM voltages I T(AV) Average on-state current 7.5 7.5 7.5 A I T(RMS) RMS on-state current 12 12 12 A I TSM Non-repetitive peak on-state 100 100 100 A current PINNING - SOT82 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500R -650R -800R V DRM, VRRM Repetitive peak off-state - 500 1 650 1 800 V voltages I T(AV) Average on-state current half sine wave; T mb ≤ 109 ˚C - 7.5 A I T(RMS) RMS on-state current all conduction angles - 12 A I TSM Non-repetitive peak half sine wave; T j = 25 ˚C prior to on-state current surge t = 10 ms - 100 A t = 8.3 ms - 110 A I 2tI2t for fusing t = 10 ms - 50 A 2s dI T/dt Repetitive rate of rise of I TM = 20 A; IG = 50 mA; - 50 A/ µs on-state current after dI G/dt = 50 mA/µs triggering I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V V RGM Peak reverse gate voltage - 12 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms period - 0.5 W T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature ak g 1 23 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/ µs. September 1997 1 Rev 1.200 |
Аналогичный номер детали - BTA151-500R |
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Аналогичное описание - BTA151-500R |
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