BU1706AX datasheet(3/7 Pages) PHILIPS

номер детали	BU1706AX

подробное описание детали	Silicon Diffused Power Transistor

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производитель	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU1706AX

Fig.1. Test circuit for V

CEOsust.

Fig.2. Oscilloscope display for V

CEOsust.

Fig.3. Test circuit resistive load. V

IM = -6 to +8 V

V

CC = 250 V; tp = 20 µs; δ = tp / T = 0.01.

R

B and RL calculated from ICon and IBon requirements.

Fig.4. Switching times waveforms with resistive load.

Fig.5. Test circuit inductive load.

V

CC = 300 V; -VBE = 5 V; LB = 1 uH

Fig.6. Test Circuit RBSOA.

V

CC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V;

L

B = 1 µH

+ 50v

100-200R

Horizontal

Vertical

Oscilloscope

1R

6V

30-60 Hz

300R

IC

IB

10 %

90 %

ton

toff

ts

tf

IBon

-IBoff

ICon

tr

30ns

VCE / V

min

VCEOsust

IC / mA

100

200

250

0

LB

IBon

-VBB

LC

T.U.T.

VCC

tp

T

VCC

R

T.U.T.

0

VIM

B

L

LB

IBend

-VBB

LC

T.U.T.

VCC

VCL

CFB

April 1994

3

Rev 1.000

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