поискавой системы для электроныых деталей |
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BU4507DF датащи(PDF) 2 Page - NXP Semiconductors |
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BU4507DF датащи(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507DF ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax - - 2.0 mA T j = 125 ˚C V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 800 - - V L = 25 mH BV EBO Emitter-base breakdown voltage I B = 600 mA 7.5 13.5 - V R be Base-emitter resistance V EB = 6 V - 30 - Ω V CEsat Collector-emitter saturation voltages I C = 4 A; IB = 1.0 A - - 3.0 V V BEsat Base-emitter saturation voltage I C = 4 A; IB = 1.0 A 0.83 0.92 1.01 V h FE DC current gain I C = 500 mA; VCE = 5 V - 7 - h FE I C = 4 A; VCE = 5 V 4.2 5.7 7.3 V F Diode forward voltage I F = 4 A - 1.7 2.1 V DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (16 kHz line I Csat = 4 A; IB1 = 0.8 A;(IB2 = -2 A) deflection circuit) t s Turn-off storage time 3.7 4.6 µs t f Turn-off fall time 300 400 ns V fr Anti-parallel diode forward recovery I F = 4 A; dIF/dt = 50 A/µs 18.5 - V voltage t fr Anti-parallel diode forward recovery V F = 5 V 500 - ns time 2 Measured with half sine-wave voltage (curve tracer). January 1999 2 Rev 1.000 |
Аналогичный номер детали - BU4507DF |
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Аналогичное описание - BU4507DF |
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