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BUJ103AX датащи(PDF) 6 Page - NXP Semiconductors

номер детали BUJ103AX
подробное описание детали  Silicon Diffused Power Transistor
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUJ103AX датащи(HTML) 6 Page - NXP Semiconductors

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August 1998
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AX
Fig.13. Reverse bias safe operating area. T
j ≤ Tj max
Fig.14. Test circuit for reverse bias
safe operating area.
V
cl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH;
L
c = 200µH
Fig.15. Forward bias safe operating area. T
hs ≤ 25 ˚C
(1)
P
tot max and Ptot peak max lines.
(2)
Second breakdown limits.
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
III
Extension during turn-on in single
transistor converters provided that
R
BE ≤ 100 Ω and tp ≤ 0.6 µs.
NB:
Mounted with heatsink compound and
30
± 5 newton force on the centre of the
envelope.
0
100
200
300
400
500
600
700
800
900
0
1
2
3
4
5
6
7
8
9
VCEclamp (V)
IC (A)
1
10
100
1,000
0.001
0.01
0.1
1
10
100
VCEclamp (V)
IC (A)
Icm max
Ic max
I
II
III
(1)
(2)
Duty Cycle = 0.01
tp =
20us
50us
100us
200us
500us
DC
1ms
2ms
LB
IBon
-VBB
LC
T.U.T.
VCC
VCL


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