поискавой системы для электроныых деталей |
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BUJ103AX датащи(PDF) 6 Page - NXP Semiconductors |
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BUJ103AX датащи(HTML) 6 Page - NXP Semiconductors |
6 / 12 page August 1998 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX Fig.13. Reverse bias safe operating area. T j ≤ Tj max Fig.14. Test circuit for reverse bias safe operating area. V cl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH; L c = 200µH Fig.15. Forward bias safe operating area. T hs ≤ 25 ˚C (1) P tot max and Ptot peak max lines. (2) Second breakdown limits. I Region of permissible DC operation. II Extension for repetitive pulse operation. III Extension during turn-on in single transistor converters provided that R BE ≤ 100 Ω and tp ≤ 0.6 µs. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. 0 100 200 300 400 500 600 700 800 900 0 1 2 3 4 5 6 7 8 9 VCEclamp (V) IC (A) 1 10 100 1,000 0.001 0.01 0.1 1 10 100 VCEclamp (V) IC (A) Icm max Ic max I II III (1) (2) Duty Cycle = 0.01 tp = 20us 50us 100us 200us 500us DC 1ms 2ms LB IBon -VBB LC T.U.T. VCC VCL |
Аналогичный номер детали - BUJ103AX |
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Аналогичное описание - BUJ103AX |
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