поискавой системы для электроныых деталей |
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BUJ204A датащи(PDF) 3 Page - NXP Semiconductors |
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BUJ204A датащи(HTML) 3 Page - NXP Semiconductors |
3 / 12 page August 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 1 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I CBO Collector cut-off current 1 V CBO = VCESMmax(850V) - - 0.1 mA I CEO V CEO = VCEOMmax(450V) - - 0.1 mA I EBO Emitter cut-off current V EB = 9 V; IC = 0 A - - 0.1 mA V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 450 - - V L = 25 mH V CEsat Collector-emitter saturation voltage I C = 4 A; IB = 0.8 A - 0.29 1.5 V V BEsat Base-emitter saturation voltage I C = 4 A; IB = 0.8 A - 1.01 1.3 V h FE DC current gain I C = 5 mA; VCE = 5 V 10 19 35 h FE I C = 500 mA; VCE = 5 V 14 25 35 h FEsat DC current gain I C = 2.5 A; VCE = 5 V 14.5 17 19.5 I C = 4 A; VCE = 5 V - 12 - DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load) I Con = 2.5 A; IBon = -IBoff = 0.5 A; R L = 75 ohms; VBB2 = 4 V; t on Turn-on time 0.57 0.8 µs t s Turn-off storage time 3.4 4 µs t f Turn-off fall time 0.34 0.47 µs Switching times (inductive load) I Con = 2.5 A; IBon = 0.5 A; LB = 1 µH; -V BB = 5 V t s Turn-off storage time 1.37 1.5 µs t f Turn-off fall time 88 150 ns Switching times (inductive load) I Con = 2.5 A; IBon = 0.5 A; LB = 1 µH; -V BB = 5 V; Tj = 100 ˚C t s Turn-off storage time - 1.6 µs t f Turn-off fall time - 200 ns 1 Measured with half sine-wave voltage (curve tracer). |
Аналогичный номер детали - BUJ204A |
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Аналогичное описание - BUJ204A |
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