BUK109-50GL datasheet(7/11 Pages) PHILIPS

номер детали	BUK109-50GL

подробное описание детали	PowerMOS transistor Logic level TOPFET

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK109-50GL

Logic level TOPFET

Fig.14. Typical overload protection characteristics.

Conditions: V

DD = 13 V; VIS = 5 V; SC load = 30 mΩ

Fig.15. Typical clamping characteristics, 25 ˚C.

I

D = f(VDS); conditions: VIS = 0 V; tp ≤ 50 µs

Fig.16. Input threshold voltage.

V

IS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V

Fig.17. Typical DC input characteristics.

I

I = f(VIS); normal operation; parameter: Tj

Fig.18. Typical DC input characteristics, T

j = 25 ˚C.

I

ISL = f(VIS); overload protection operated ⇒ ID = 0 A

Fig.19. Typical reverse diode current, T

j = 25 ˚C.

I

S = f(VSDS); conditions: VIS = 0 V

-60

-20

20

60

100

140

180

220

Tmb / C

BUK109-50GL

1

0.5

0

Energy / J

Time / ms

Tj(TO)

Energy & Time

0

2

4

6

8

10

VIS / V

II / uA

BUK109-50GL

500

400

300

200

100

0

150 C

Tj = 25 C

50

60

70

VIS / V

ID / A

BUK109-50GL

30

20

10

0

typ.

0

2

4

6

8

VIS / V

IISL / mA

BUK109-50GL

3

2

1

0

RESET

PROTECTION LATCHED

NORMAL

-60

-40

-20

0

20

40

60

80

100

120

140

Tj / C

VIS(TO) / V

2

1

0

max.

typ.

min.

0

1

2

VSD / V

IS / A

BUK109-50GL

100

50

0

June 1996

7

Rev 1.000

Аналогичный номер детали - BUK109-50GL

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Аналогичное описание - BUK109-50GL

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Аналогичный номер детали - BUK109-50GL

Аналогичное описание - BUK109-50GL

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