поискавой системы для электроныых деталей |
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BUK112-50GL датащи(PDF) 2 Page - NXP Semiconductors |
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BUK112-50GL датащи(HTML) 2 Page - NXP Semiconductors |
2 / 16 page Philips Semiconductors Product specification PowerMOS transistor BUK112-50GL Logic level TOPFET LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Continuous voltage V DS Drain source voltage 1 V IS = 0 V - 50 V Continuous currents I D Drain current V PS = 5 V; Tmb = 25 ˚C - self - A limited V PS = 0 V; Tmb = 94 ˚C - 12 A I I Input current - -5 5 mA I F Flag current - -5 5 mA I P Protection supply current - -5 5 mA Thermal P tot Total power dissipation T mb = 25 ˚C - 52 W T stg Storage temperature - -55 175 ˚C T j Junction temperature 2 continuous - 150 ˚C T sold Lead temperature during soldering - 260 ˚C ESD LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Electrostatic discharge capacitor Human body model; voltages C = 100 pF; R = 1.5 k Ω V C1 Drain to source - 4.5 kV V C2 Input, flag or protection to source - 2 kV OVERLOAD PROTECTION LIMITING VALUE With the protection supply For overload conditions an n-MOS The drain current is limited to connected, TOPFET can protect transistor turns on between the reduce dissipation in case of short itself from two types of overload - gate and source to quickly circuit load. Refer to OVERLOAD short circuit load and discharge the power MOSFET CHARACTERISTICS. overtemperature. gate capacitance. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V PSP Protection supply voltage 3 for valid protection 4.5 - V OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E DSM Non-repetitive clamping energy I DM = 6 A; Tmb = 25˚C - 200 mJ E DRM Repetitive clamping energy I DM = 3.1 A; VDD ≤ 20 V; - 20 mJ T mb ≤ 120˚C; f = 250 Hz 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher T j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The minimum supply voltage required for correct operation of the overload protection circuits. September 1996 2 Rev 1.000 |
Аналогичный номер детали - BUK112-50GL |
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Аналогичное описание - BUK112-50GL |
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