Philips Semiconductors

Product specification

PowerMOS transistor

BUK112-50GL

Logic level TOPFET

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Continuous voltage

V

DS

Drain source voltage

1

V

-

50

V

Continuous currents

I

D

Drain current

V

-

self -

A

limited

V

-

12

A

I

I

Input current

-

-5

5

mA

I

F

Flag current

-

-5

5

mA

I

P

Protection supply current

-

-5

5

mA

Thermal

P

tot

Total power dissipation

T

-

52

W

T

stg

Storage temperature

-

-55

175

˚C

T

j

Junction temperature

2

continuous

-

150

˚C

T

sold

Lead temperature

during soldering

-

260

˚C

ESD LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Electrostatic discharge capacitor

Human body model;

voltages

C = 100 pF; R = 1.5 k

Ω

V

C1

Drain to source

-

4.5

kV

V

C2

Input, flag or protection to source

-

2

kV

OVERLOAD PROTECTION LIMITING VALUE

With the protection supply

For overload conditions an n-MOS

The drain current is limited to

connected, TOPFET can protect

transistor turns on between the

reduce dissipation in case of short

itself from two types of overload -

gate and source to quickly

circuit load. Refer to OVERLOAD

short circuit load and

discharge the power MOSFET

CHARACTERISTICS.

overtemperature.

gate capacitance.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

PSP

Protection supply voltage

3

for valid protection

4.5

-

V

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

DSM

Non-repetitive clamping energy

I

-

200

mJ

E

DRM

Repetitive clamping energy

I

-

20

mJ

T

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher T

3 The minimum supply voltage required for correct operation of the overload protection circuits.

September 1996

2

Rev 1.000