поискавой системы для электроныых деталей |
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BUK200-50Y датащи(PDF) 5 Page - NXP Semiconductors |
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BUK200-50Y датащи(HTML) 5 Page - NXP Semiconductors |
5 / 13 page Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch DYNAMIC CHARACTERISTICS T mb = 25 ˚C; VBG = 13 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Inductive load turn-off -V LG Negative load voltage 1 V IG = 0 V; IL = 5 A; tp = 300 µs15 20 25 V Short circuit load protection 2 V IG = 5 V; RL ≤ 10 mΩ t d sc Response time - 90 - µs I L Load current prior to turn-off t < t d sc -35 - A Overload protection 3 I L(lim) Load current limiting V BL = 8.5 V; tp = 300 µs23 33 43 A SWITCHING CHARACTERISTICS T mb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT During turn-on to V IG = 5 V t d on Delay time to 10% V L -16 - µs dV/dt on Rate of rise of load voltage - 1 2.5 V/ µs t on Total switching time to 90% V L -40 - µs During turn-off to V IG = 0 V t d off Delay time to 90% V L -30 - µs dV/dt off Rate of fall of load voltage - 1.2 2.5 V/ µs t off Total switching time to 10% V L -50 - µs CAPACITANCES T mb = 25 ˚C; f = 1 MHz; VIG = 0 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C ig Input capacitance V BG = 13 V - 15 20 pF C bl Output capacitance V BL = VBG = 13 V - 330 460 pF C sg Status capacitance V SG = 5 V - 11 15 pF 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes high. 3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than V BL(TO), the device remains in current limiting until the overtemperature protection operates. April 1995 5 Rev 1.000 |
Аналогичный номер детали - BUK200-50Y |
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Аналогичное описание - BUK200-50Y |
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