BUK438W-800A datasheet(2/7 Pages) PHILIPS

номер детали	BUK438W-800A

подробное описание детали	PowerMOS transistor

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производитель	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK438W-800A/B

STATIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

800

-

V

voltage

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 1 mA

2.1

3.0

4.0

V

I

DSS

Zero gate voltage drain current

V

DS = 800 V; VGS = 0 V; Tj = 25 ˚C

-

5

50

µA

I

DSS

Zero gate voltage drain current

V

DS = 800 V; VGS = 0 V; Tj =125 ˚C

-

0.1

1.0

mA

I

GSS

Gate source leakage current

V

GS = ±30 V; VDS = 0 V

-

10

100

nA

R

DS(ON)

Drain-source on-state

V

GS = 10 V;

BUK438-800A

-

1.2

1.5

Ω

resistance

I

D = 4.0 A

BUK438-800B

-

1.6

2.0

Ω

DYNAMIC CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

g

fs

Forward transconductance

V

DS = 25 V; ID = 4.0 A

3.0

7.5

-

S

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

2000

3000

pF

C

oss

Output capacitance

-

200

300

pF

C

rss

Feedback capacitance

-

100

200

pF

t

d on

Turn-on delay time

V

DD = 30 V; ID = 2.6 A;

-

40

90

ns

t

r

Turn-on rise time

V

GS = 10 V; RGS = 50 Ω;

-

100

140

ns

t

d off

Turn-off delay time

R

gen = 50 Ω

-

300

430

ns

t

f

Turn-off fall time

-

100

140

ns

L

d

Internal drain inductance

Measured from contact screw on

-

5

-

nH

tab to centre of die

L

d

Internal drain inductance

Measured from drain lead 6 mm

-

5

-

nH

from package to centre of die

L

s

Internal source inductance

Measured from source lead 6 mm

-

12.5

-

nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T

mb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

DR

Continuous reverse drain

-

7.6

A

current

I

DRM

Pulsed reverse drain current

-

30

A

V

SD

Diode forward voltage

I

F = 7.6 A ;VGS = 0 V

-

0.9

1.3

V

t

rr

Reverse recovery time

I

F = 7.6 A; -dIF/dt = 100 A/µs;

-

1.5

-

µs

Q

rr

Reverse recovery charge

V

GS = 0 V; VR = 100 V

-

20

-

µC

February 1998

2

Rev 1.000

Аналогичный номер детали - BUK438W-800A

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BUK438W-800A датащи(PDF) 2 Page - NXP Semiconductors

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