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2N6027G датащит (Datasheet) 1 Page - ON Semiconductor

№ деталь 2N6027G
подробность  Programmable Unijunction Transistor
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
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© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev.6
1
Publication Order Number:
2N6027/D
2N6027, 2N6028
Preferred Device
Programmable
Unijunction Transistor
Programmable Unijunction
Transistor Triggers
Designed to enable the engineer to “program’’ unijunction
characteristics such as RBB,
h, IV, and IP by merely selecting
two resistor values. Application includes thyristor−trigger, oscillator,
pulse and timing circuits. These devices may also be used in special
thyristor applications due to the availability of an anode gate. Supplied
in an inexpensive TO−92 plastic package for high−volume
requirements, this package is readily adaptable for use in automatic
insertion equipment.
Features
Programmable − RBB, h, IV and IP
Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
Low Gate to Anode Leakage Current − 10 nA Maximum
High Peak Output Voltage − 11 V Typical
Low Offset Voltage − 0.35 V Typical (RG = 10 kW)
Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PUTs
40 VOLTS, 300 mW
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
K
G
A
TO−92 (TO−226AA)
CASE 029
STYLE 16
3
2
1
PIN ASSIGNMENT
1
2
3
Gate
Cathode
Anode
http://onsemi.com
2N602x
= Device Code
x = 7 or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
MARKING DIAGRAM
2N
602x
AYWW
G
G
(Note: Microdot may be in either location)




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