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FDS8949 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8949 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page tm October 2006 ©2006 Fairchild Semiconductor Corporation FDS8949 Rev. B1 www.fairchildsemi.com 1 FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29m Ω Features Max rDS(on) = 29mΩ at VGS = 10V Max rDS(on) = 36mΩ at VGS = 4.5V Low gate charge High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications Inverter Power suppliers MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Note 1a) 6 A -Pulsed 20 EAS Drain-Source Avalanche Energy (Note 3) 26 mJ PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) (Note 1b) 1.6 0.9 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C RθJA Thermal Resistance-Single operation, Junction to Ambient (Note 1a) 81 °C/W RθJA Thermal Resistance-Single operation, Junction to Ambient (Note 1b) 135 RθJC Thermal Resistance, Junction to Case (Note 1) 40 Device Marking Device Reel Size Tape Width Quantity FDS8949 FDS8949 13’’ 12mm 2500 units Pin 1 SO-8 D1 D1 D2 D2 S2 S1 G1 G2 |
Аналогичный номер детали - FDS8949 |
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Аналогичное описание - FDS8949 |
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