BUK456-100A datasheet(4/7 Pages) PHILIPS

номер детали	BUK456-100A

подробное описание детали	PowerMOS transistor

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK456-100A/B

Fig.7. Typical transfer characteristics.

I

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID); conditions: VDS = 25 V

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 15 A; VGS = 10 V

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

0

2

4

6

8

10

BUK456-100A

VGS / V

ID / A

70

60

50

40

30

20

10

0

Tj / C =

25

150

-60

-20

20

60

100

140

180

Tj / C

VGS(TO) / V

4

3

2

1

0

max.

typ.

min.

0

20

40

60

BUK456-100A

ID / A

gfs / S

20

10

0

1

2

3

4

VGS / V

ID / A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

SUB-THRESHOLD CONDUCTION

typ

2 %

98 %

-60

-20

20

60

100

140

180

Tj / C

Normalised RDS(ON) = f(Tj)

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

a

0

20

40

VDS / V

C / pF

Ciss

Coss

Crss

10

100

1000

10000

BUK4y6-100

April 1998

4

Rev 1.100

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