BUK475-200B datasheet(4/7 Pages) PHILIPS

номер детали	BUK475-200B

подробное описание детали	PowerMOS transistor Isolated version of BUK455-200A/B

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Philips Semiconductors

Product specification

PowerMOS transistor

BUK475-200A/B

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VGS

Fig.7. Typical transfer characteristics.

I

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID); conditions: VDS = 25 V

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 7 A; VGS = 10 V

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

0

2

4

6

8

10

12

14

16

18

20

BUK455-200A

VDS / V

30

20

10

0

4

5

6

7

8

10

20

ID / A

VGS / V =

0

4

8

12

16

20

24

28

BUK455-200A

ID / A

gfs / S

15

10

5

0

4

8

12

16

20

24

28

BUK455-200A

ID / A

1.0

0.8

0.6

0.4

0.2

0

4

4.5

5

5.5

6

8

10

20

RDS(ON) / Ohm

VGS / V =

-60

-40

-20

0

20

40

60

80

100 120 140

Tj / C

Normalised RDS(ON) = f(Tj)

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

a

0

2

4

6

8

10

BUK455-200A

VGS / V

ID / A

28

24

20

16

12

8

4

0

Tj / C =

150

25

-60

-40

-20

0

20

40

60

80

100

120

140

Tj / C

VGS(TO) / V

4

3

2

1

0

max.

typ.

min.

June 1996

4

Rev 1.200

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BUK475-200B датащи(PDF) 4 Page - NXP Semiconductors

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