поискавой системы для электроныых деталей |
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BUK482-200A датащи(PDF) 1 Page - NXP Semiconductors |
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BUK482-200A датащи(HTML) 1 Page - NXP Semiconductors |
1 / 8 page Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface V DS Drain-source voltage 200 V mounting featuring high avalanche I D Drain current (DC) 2.0 A energy capability, stable blocking P tot Total power dissipation 8.3 W voltage, fast switching and high R DS(ON) Drain-source on-state resistance 0.9 Ω thermal cycling performance. Intended for use in Switched Mode Power Supplies (SMPS) and general purpose switching applications. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 drain 3 source 4 drain (tab) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - 200 V V DGR Drain-gate voltage R GS = 20 kΩ - 200 V ±V GS Gate-source voltage - 30 V I D Drain current (DC) T sp = 25 ˚C - 2.0 A T sp = 100 ˚C - 1.3 A I DM Drain current (pulse peak T sp = 25 ˚C - 8.0 A value) I DR Source-drain diode current T sp = 25 ˚C - 2.0 A (DC) I DRM Source-drain diode current T sp = 25 ˚C - 8.0 A (pulse peak value) P tot Total power dissipation T sp = 25 ˚C - 8.3 W T stg Storage temperature -55 150 ˚C T j Junction Temperature - 150 ˚C AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT W DSS Drain-source non-repetitive I D = 2 A ; VDD ≤ 50 V ; VGS = 10 V ; unclamped inductive turn-off R GS = 50 Ω energy T j = 25˚C prior to surge - 50 mJ T j = 100˚C prior to surge - 8 mJ 4 1 23 d g s January 1998 1 Rev 1.000 |
Аналогичный номер детали - BUK482-200A |
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Аналогичное описание - BUK482-200A |
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