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BUK482-200A датащи(PDF) 1 Page - NXP Semiconductors

номер детали BUK482-200A
подробное описание детали  PowerMOS transistor
Download  8 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK482-200A датащи(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK482-200A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
field-effect power transistor in a
plastic envelope suitable for surface
V
DS
Drain-source voltage
200
V
mounting featuring high avalanche
I
D
Drain current (DC)
2.0
A
energy capability, stable blocking
P
tot
Total power dissipation
8.3
W
voltage, fast switching and high
R
DS(ON)
Drain-source on-state resistance
0.9
thermal
cycling
performance.
Intended for use in Switched Mode
Power Supplies (SMPS) and general
purpose switching applications.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
200
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-
200
V
±V
GS
Gate-source voltage
-
30
V
I
D
Drain current (DC)
T
sp =
25 ˚C
-
2.0
A
T
sp = 100 ˚C
-
1.3
A
I
DM
Drain current (pulse peak
T
sp =
25 ˚C
-
8.0
A
value)
I
DR
Source-drain diode current
T
sp =
25 ˚C
-
2.0
A
(DC)
I
DRM
Source-drain diode current
T
sp =
25 ˚C
-
8.0
A
(pulse peak value)
P
tot
Total power dissipation
T
sp =
25 ˚C
-
8.3
W
T
stg
Storage temperature
-55
150
˚C
T
j
Junction Temperature
-
150
˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D = 2 A ; VDD ≤ 50 V ; VGS = 10 V ;
unclamped inductive turn-off
R
GS = 50 Ω
energy
T
j = 25˚C prior to surge
-
50
mJ
T
j = 100˚C prior to surge
-
8
mJ
4
1
23
d
g
s
January 1998
1
Rev 1.000


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