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BUK545-60A датащи(PDF) 2 Page - NXP Semiconductors |
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BUK545-60A датащи(HTML) 2 Page - NXP Semiconductors |
2 / 8 page Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level FET STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 60 - - V voltage V GS(TO) Gate threshold voltage V DS = VGS; ID = 1 mA 1.0 1.5 2.0 V I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA I DSS Zero gate voltage drain current V DS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA I GSS Gate source leakage current V GS = ±15 V; VDS = 0 V - 10 100 nA R DS(ON) Drain-source on-state V GS = 5 V; BUK545-60A - 0.035 0.042 Ω resistance I D = 20 A BUK545-60B - 0.045 0.055 Ω DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT g fs Forward transconductance V DS = 25 V; ID = 20 A 11 20 - S C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 1450 1750 pF C oss Output capacitance - 500 600 pF C rss Feedback capacitance - 220 275 pF t d on Turn-on delay time V DD = 30 V; ID = 3 A; - 25 40 ns t r Turn-on rise time V GS = 5 V; RGS = 50 Ω; - 120 150 ns t d off Turn-off delay time R gen = 50 Ω - 160 220 ns t f Turn-off fall time - 110 145 ns L d Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L s Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 12 - pF heatsink REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I DR Continuous reverse drain - - - 20 A current I DRM Pulsed reverse drain current - - - 80 A V SD Diode forward voltage I F = 20 A ; VGS = 0 V - 1.4 2.0 V t rr Reverse recovery time I F = 20 A; -dIF/dt = 100 A/µs; - 60 - ns Q rr Reverse recovery charge V GS = 0 V; VR = 30 V - 0.25 - µC April 1993 2 Rev 1.100 |
Аналогичный номер детали - BUK545-60A |
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Аналогичное описание - BUK545-60A |
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