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SI9910DY-T1-E3 датащи(PDF) 1 Page - Vishay Siliconix |
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SI9910DY-T1-E3 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Si9910 Vishay Siliconix Document Number: 70009 S-42043—Rev. H, 15-Nov-04 www.vishay.com 1 Adaptive Power MOSFET Driver1 FEATURES D dv/dt and di/dt Control D Undervoltage Protection D Short-Circuit Protection D trr Shoot-Through Current Limiting D Low Quiescent Current D CMOS Compatible Inputs D Compatible with Wide Range of MOSFET Devices D Bootstrap and Charge Pump Compatible (High-Side Drive) DESCRIPTION The Si9910 Power MOSFET driver provides optimized gate drive signals, protection circuitry and logic level interface. Very low quiescent current is provided by a CMOS buffer and a high-current emitter-follower output stage. This efficiency allows operation in high-voltage bridge applications with “bootstrap” or “charge-pump” floating power supply techniques. The non-inverting output configuration minimizes current drain for an n-channel “on” state. The logic input is internally diode clamped to allow simple pull-down in high-side drives. Fault protection circuitry senses an undervoltage or output short-circuit condition and disables the power MOSFET. Addition of one external resistor limits maximum di/dt of the external Power MOSFET. A fast feedback circuit may be used to limit shoot-through current during trr (diode reverse recovery time) in a bridge configuration. The Si9910 is available in both standard and lead (Pb)-free 8-pin plastic DIP and SOIC packages which are specified to operate over the industrial temperature range of −40_C to 85_C. FUNCTIONAL BLOCK DIAGRAM DRAIN PULL-UP PULL-DOWN C1 * Typical Values VDD VSS R2 *250 W R3 *100 kW VDS Undervoltage/ Overcurrent Protection *2 to 5 pF ISENSE INPUT R1 *0.1 W 2-ms Delay 1. Patent Number 484116. |
Аналогичный номер детали - SI9910DY-T1-E3 |
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Аналогичное описание - SI9910DY-T1-E3 |
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