поискавой системы для электроныых деталей |
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BUK555-60H датащи(PDF) 4 Page - NXP Semiconductors |
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BUK555-60H датащи(HTML) 4 Page - NXP Semiconductors |
4 / 7 page Philips Semiconductors Product specification PowerMOS transistor BUK555-60H Logic level FET Fig.7. Typical transfer characteristics. I D = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.8. Typical transconductance, T j = 25 ˚C. g fs = f(ID); conditions: VDS = 10 V Fig.9. Normalised drain-source on-state resistance. a = R DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 20 A; VGS = 5 V Fig.10. Gate threshold voltage. V GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.11. Sub-threshold drain current. I D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Fig.12. Typical capacitances, C iss, Coss, Crss. C = f(V DS); conditions: VGS = 0 V; f = 1 MHz 01 2345678 0 20 40 60 80 100 BUK5Y5-60H VGS / V ID / A Tj / C = -40 25 150 -60 -20 20 60 100 140 180 Tj / C VGS(TO) / V 2 1 0 max. typ. min. 0 2040 6080 100 0 10 20 30 40 BUK5Y5-60H ID / A gfs / S Tj / C = -40 25 150 0 0.4 0.8 1.2 1.6 2 2.4 VGS / V ID / A 1E-01 1E-02 1E-03 1E-04 1E-05 1E-06 SUB-THRESHOLD CONDUCTION 2 % typ 98 % -60 -20 20 60 100 140 180 Tj / C Normalised RDS(ON) = f(Tj) 2.0 1.5 1.0 0.5 0 a 0.1 1 10 100 100 1000 10000 BUK5Y5-60H VDS / V C / pF Ciss Coss Crss August 1994 4 Rev 1.000 |
Аналогичный номер детали - BUK555-60H |
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Аналогичное описание - BUK555-60H |
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