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BUK555-60H датащи(PDF) 2 Page - NXP Semiconductors

номер детали BUK555-60H
подробное описание детали  PowerMOS transistor Logic level FET
Download  7 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK555-60H датащи(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK555-60H
Logic level FET
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA
60
-
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1.0
1.5
2.0
V
I
DSS
Zero gate voltage drain current
V
DS = 60 V; VGS = 0 V; Tj = 25 ˚C
-
1
10
µA
I
DSS
Zero gate voltage drain current
V
DS = 60 V; VGS = 0 V; Tj =125 ˚C
-
0.1
1.0
mA
I
GSS
Gate source leakage current
V
GS = ±15 V; VDS = 0 V
-
10
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 20 A
-
25
38
m
resistance
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 25 V; ID = 20 A
11
20
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
1200
1750
pF
C
oss
Output capacitance
-
470
600
pF
C
rss
Feedback capacitance
-
180
275
pF
t
d on
Turn-on delay time
V
DD = 30 V; ID = 3 A;
-
25
40
ns
t
r
Turn-on rise time
V
GS = 5 V; RGS = 50 Ω;
-
120
150
ns
t
d off
Turn-off delay time
R
gen = 50 Ω
-
160
220
ns
t
f
Turn-off fall time
-
110
145
ns
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
-
41
A
current
I
DRM
Pulsed reverse drain current
-
-
-
164
A
V
SD
Diode forward voltage
I
F = 41 A ; VGS = 0 V
-
0.95
2.0
V
t
rr
Reverse recovery time
I
F = 41 A; -dIF/dt = 100 A/µs;
-
60
-
ns
Q
rr
Reverse recovery charge
V
GS = 0 V; VR = 30 V
-
0.30
-
µC
AVALANCHE LIMITING VALUE
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D = 41 A ; VDD ≤ 25 V ;
-
-
90
mJ
unclamped inductive turn-off
V
GS = 5 V ; RGS = 50 Ω
energy
August 1994
2
Rev 1.000


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