JFET VHF/UHF Amplifiers

N–Channel — Depletion

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDS

±30

Vdc

Drain–Gate Voltage

VDG

30

Vdc

Gate–Source Voltage

VGS

30

Vdc

Drain Current

ID

100

mAdc

Forward Gate Current

IG(f)

10

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Storage Channel Temperature Range

Tstg

–65 to +150

°C

3 DRAIN

1 SOURCE

2

GATE

3 DRAIN

2 SOURCE

1

GATE

STYLE 22

STYLE 23

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

(IG = 1.0 µAdc, VDS = 0)

V(BR)GSS

30

—

—

Vdc

Gate–Source

(VDS = 15 Vdc, ID = 200 µAdc)

BF245(1)

BF245A,

BF244A(2)

BF245B,

BF244B

BF245C

VGS

0.4

0.4

1.6

3.2

—

—

—

—

7.5

2.2

3.8

7.5

Vdc

Gate–Source Cutoff Voltage

(VDS = 15 Vdc, ID = 10 nAdc)

VGS(off)

–0.5

—

–8.0

Vdc

Gate Reverse Current

(VGS = 20 Vdc, VDS = 0)

IGSS

—

—

5.0

nAdc

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

(VDS = 15 Vdc, VGS = 0)

BF245(1)

BF245A,

BF244A(2)

BF245B,

BF244B

BF245C

IDSS

2.0

2.0

6.0

12

—

—

—

—

25

6.5

15

25

mAdc

1. On orders against the BF245, any or all subgroups might be shipped.

2. On orders against the BF244A, any or all subgroups might be shipped.

ON Semiconductort

© Semiconductor Components Industries, LLC, 2001

June, 2001 – Rev. 0

1

Publication Order Number:

BF245A/D

BF245A

BF245B

BF244A, BF244B

CASE 29–11, STYLE 22

TO–92 (TO–226AA)

1

2

3

BF245, BF245A,

BF245B, BF245C

CASE 29–11, STYLE 23

TO–92 (TO–226AA)

1

2

3