поискавой системы для электроныых деталей |
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BUK7618-55 датащи(PDF) 1 Page - NXP Semiconductors |
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BUK7618-55 датащи(HTML) 1 Page - NXP Semiconductors |
1 / 8 page Philips Semiconductors Product specification TrenchMOS ™ transistor BUK7618-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope V DS Drain-source voltage 55 V suitable for surface mounting. Using I D Drain current (DC) 57 A ’trench’ technology the device P tot Total power dissipation 125 W features very low on-state resistance T j Junction temperature 175 ˚C and has integral zener diodes giving R DS(ON) Drain-source on-state 18 m Ω ESD protection up to 2kV. It is resistance V GS = 10 V intended for use in automotive and general purpose switching applications. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 drain 3 source mb drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drain-source voltage - - 55 V V DGR Drain-gate voltage R GS = 20 kΩ -55 V ±V GS Gate-source voltage - - 16 V I D Drain current (DC) T mb = 25 ˚C - 57 A I D Drain current (DC) T mb = 100 ˚C - 40 A I DM Drain current (pulse peak value) T mb = 25 ˚C - 228 A P tot Total power dissipation T mb = 25 ˚C - 125 W T stg, Tj Storage & operating temperature - - 55 175 ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge capacitor Human body model - 2 kV voltage, all pins (100 pF, 1.5 k Ω) THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 1.2 K/W mounting base R th j-a Thermal resistance junction to Minimum footprint, FR4 50 - K/W ambient board d g s 13 mb 2 April 1998 1 Rev 1.000 |
Аналогичный номер детали - BUK7618-55 |
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Аналогичное описание - BUK7618-55 |
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