поискавой системы для электроныых деталей |
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BUK856-800A датащи(PDF) 1 Page - NXP Semiconductors |
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BUK856-800A датащи(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK856-800A GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated SYMBOL PARAMETER MAX. UNIT gate bipolar power transistor in a plastic envelope. V CE Collector-emitter voltage 800 V The device is intended for use in I C Collector current (DC) 24 A motor control, DC/DC and AC/DC P tot Total power dissipation 125 W converters, and in general purpose V CEsat Collector-emitter on-state voltage 3.5 V high frequency switching E off Turn-off energy Loss 1.0 mJ applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 collector 3 emitter tab collector LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CE Collector-emitter voltage - -5 800 V V CGR Collector-gate voltage R GE = 20 kΩ - 800 V ±V GE Gate-emitter voltage - - 30 V I C Collector current (DC) T mb = 25 ˚C - 24 A I C Collector current (DC) T mb = 100 ˚C - 12 A I CLM Collector Current (Clamped T j ≤ Tjmax. -40 A Inductive Load) V CL ≤ 500 V I CM Collector current (pulsed peak value, T j ≤ Tjmax. -50 A on-state) P tot Total power dissipation T mb = 25 ˚C - 125 W T stg Storage temperature - - 55 150 ˚C T j Junction Temperature - - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-mb Junction to mounting base - - 1.0 K/W R th j-a Junction to ambient In free air 60 - K/W 12 3 tab c g e March 1993 1 Rev 1.000 |
Аналогичный номер детали - BUK856-800A |
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Аналогичное описание - BUK856-800A |
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