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UC3550-50-AF5-R датащи(PDF) 7 Page - Unisonic Technologies

номер детали UC3550-50-AF5-R
подробное описание детали  PWM CONTROLLED竊똏WM/PFM SWITCHABLE STEP-UP DC-DC CONTROLLER
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UC3550-50-AF5-R датащи(HTML) 7 Page - Unisonic Technologies

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UC3550
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
7 of 10
www.unisonic.com.tw
QW-R502-082,A
EXTERNAL COMPONENT SELECTION
Inductor Selection
An inductor value of 10uH performs well in most application. The UC3550 series also work with inductors in the
4.7uH to 12uH range. An inductor with higher peak inductor current tends a higher output voltage ripple(IPEAK x
output filter capacitor ESR). The inductor’s DC resistance significantly affects efficiency.
Output Capacitor Selection
The output ripple voltage(IPEAK x output filter capacitor ESR)is the product of the peak inductor current and the
output capacitor Equivalent Series Resistance (ESR). Best performances are obtained with good high frequency
characteristics capacitors and low ESR. The best compromise for the value of the Output Capacitance is 220F
Tantalum Capacitor. The output capacitor as close as possible to the device pins.
Input Capacitor Selection
The Input Capacitor is required to compensate, if present, the series impedance between the Supply Voltage
Source and the Input Voltage of the Application. A value of 10 F is enough to guarantee stability
 
for distances less
than 2". In any case we suggest to connect both capacitors, The input capacitor as close as possible to the device
pins.
Diode Selection
The Schottky diode with an high switching speed and a very low Forward Voltage (VF) is needed. Higher VF may
cause lost power as heat in the diode, with a decrease of the Efficiency. Moreover, since the Output Voltage pin is
also used as the device Supply Voltage, the Start-up Voltage (see related plots) is strictly due to the diode Forward
Voltage at the rated Forward Current.
External Component Selection
An enhancement N-channel MOSFET or a bipolar NPN transistor can be used as the external switch transistor.
since enhancement N-channel MOSFET is a voltage driven device, it is a more efficient switch than a BJT transistor.
However, he MOSFET requires a higher voltage to turn on as compared with BJT transistor
For enhancement N-channel MOSFET ( it is especially importance for RDS(ON),typically<0.1Ω, threshold voltage,
VGS(TH) must be<VOUT, typically<1.5V.
For bipolar NPN transistor, continuous collector current typically 1A to 4A and VCE(SAT)<0.2V. the driving capability
is determined by the DC current gain, HFE, of the transistor and the base resistor, Rb. Moreover, a speed-up
capacitor, Cb should be connected in paralled with Rb to reduce switch loss and improve efficiency.


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Аналогичное описание - UC3550-50-AF5-R

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