TIP131 datasheet(1/4 Pages) ONSEMI

номер детали	TIP131

подробное описание детали	Darlington Complementary Silicon Power Transistors

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производитель	ONSEMI [ON Semiconductor]

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August, 2005 − Rev. 1

1

Publication Order Number:

TIP131/D

TIP131, TIP132 (NPN),

TIP137 (PNP)

Preferred Devices

Darlington Complementary

Silicon Power Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

• High DC Current Gain −

hFE = 2500 (Typ) @ IC

= 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 30 mAdc

VCEO(sus) = 80 Vdc (Min) − TIP131

= 100 Vdc (Min) − TIP132, TIP137

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc

= 3.0 Vdc (Max) @ IC = 6.0 Adc

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

TIP131

TIP132

TIP137

Unit

Collector−Emitter Voltage

VCEO

80

100

Vdc

Collector−Base Voltage

VCB

80

100

Vdc

Emitter−Base Voltage

VEB

5.0

Vdc

Collector Current − Continuous

Peak

IC

8.0

12

Adc

Base Current

IB

300

mAdc

Total Power Dissipation @ TC = 25_C

PD

70

W

Total Power Dissipation @ TA = 25_C

PD

2.0

W

Operating and Storage Junction,

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Case

RqJC

1.78

_C/W

Thermal Resistance,

Junction−to−Ambient

RqJA

63.5

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

TIP131

TO−220

TO−220AB

CASE 221A

STYLE 1

50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

MARKING

DIAGRAM

DARLINGTON 8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 70 WATTS

http://onsemi.com

1

2

3

4

TIP132

TO−220

50 Units/Rail

TIP137

TO−220

50 Units/Rail

TIP131G

TO−220

(Pb−Free)

50 Units/Rail

TIP132G

TO−220

(Pb−Free)

50 Units/Rail

TIP137G

TO−220

(Pb−Free)

50 Units/Rail

TIP13x

= Device Code

x

= 1, 2, or 7

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

TIP13xG

AYWW

Аналогичный номер детали - TIP131

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	TIP131	150Kb / 3P	POWER TRANSISTORS(8.0A,60-100V,70W)
Power Innovations Ltd	TIP131	141Kb / 6P	NPN SILICON POWER DARLINGTONS
STMicroelectronics	TIP131	41Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TRANSYS Electronics Lim...	TIP131	72Kb / 2P	PLASTIC POWER TRANSISTORS
Inchange Semiconductor ...	TIP131	105Kb / 2P	isc Silicon NPN Darlington Power Transistor

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Аналогичное описание - TIP131

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	MJ2501	70Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	MJD112	84Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	BDX87C	70Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	SGSD100	894Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS October 2003
	TIP122FP	29Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	TIP140	48Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
ON Semiconductor	TIP100	218Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1995 REV 7
ON Semiconductor	MJ11017	235Kb / 6P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 1995
STMicroelectronics	BDW83C	67Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics	BDX53B	80Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Boca Semiconductor Corp...	2N6298	184Kb / 4P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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