поискавой системы для электроныых деталей |
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BYC8-600 датащи(PDF) 1 Page - NXP Semiconductors |
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BYC8-600 датащи(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Rectifier diode BYC8-600 ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA • Extremely fast switching V R = 600 V • Low reverse recovery current • Low thermal resistance V F ≤ 1.85 V • Reduces switching losses in associated MOSFET I F(AV) = 8 A t rr = 19 ns (typ) APPLICATIONS PINNING SOD59 (TO220AC) • Active power factor correction PIN DESCRIPTION • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched 1 cathode mode power supplies. 2 anode The BYC8-600 is supplied in the SOD59 (TO220AC) conventional tab cathode leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM Peak repetitive reverse voltage - 600 V V RWM Crest working reverse voltage - 600 V V R Continuous reverse voltage T mb ≤ 110 ˚C - 500 V I F(AV) Average forward current δ = 0.5; with reapplied V RRM(max);- 8 A T mb ≤ 82 ˚C 1 I FRM Repetitive peak forward current δ = 0.5; with reapplied V RRM(max); - 16 A T mb ≤ 82 ˚C 1 I FSM Non-repetitive peak forward t = 10 ms - 55 A current. t = 8.3 ms - 60 A sinusoidal; T j = 150˚C prior to surge with reapplied V RWM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 2.2 K/W mounting base R th j-a Thermal resistance junction to in free air. - 60 - K/W ambient k a 12 1 tab 2 September 1998 1 Rev 1.100 |
Аналогичный номер детали - BYC8-600 |
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Аналогичное описание - BYC8-600 |
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