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BYQ30EX датащи(PDF) 1 Page - NXP Semiconductors |
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BYQ30EX датащи(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Rectifier diodes BYQ30EX series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 150 V/ 200 V • Fast switching • Soft recovery characteristic V F ≤ 0.95 V • Reverse surge capability • High thermal cycling performance I O(AV) = 16 A • Isolated mounting tab I RRM ≤ 0.2 A t rr ≤ 25 ns GENERAL DESCRIPTION PINNING SOT186A Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION intended for use as output rectifiers in high frequency switched mode 1 anode 1 power supplies. 2 cathode The BYQ30EX series is supplied in the conventional leaded SOT186A 3 anode 2 package. tab isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYQ30EX -150 -200 V RRM Peak repetitive reverse voltage - 150 200 V V RWM Crest working reverse voltage - 150 200 V V R Continuous reverse voltage - 150 200 V I O(AV) Average rectified output current square wave - 16 A (both diodes conducting) 1 δ = 0.5; T hs ≤ 59 ˚C I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A per diode T hs ≤ 59 ˚C I FSM Non-repetitive peak forward t = 10 ms - 100 A current per diode t = 8.3 ms - 110 A sinusoidal; with reapplied V RWM(max) I RRM Repetitive peak reverse current t p = 2 µs; δ = 0.001 - 0.2 A per diode I RSM Non-repetitive peak reverse t p = 100 µs - 0.2 A current per diode T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V C Electrostatic discharge Human body model; - 8 kV capacitor voltage C = 250 pF; R = 1.5 k Ω k a1 a2 13 2 12 3 case 1 Neglecting switching and reverse current losses. October 1998 1 Rev 1.200 |
Аналогичный номер детали - BYQ30EX |
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Аналогичное описание - BYQ30EX |
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