TIP146 datasheet(3/7 Pages) ONSEMI

номер детали	TIP146

подробное описание детали	Darlington Complementary Silicon Power Transistors

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TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mA, IB = 0)

TIP140, TIP145

TIP141, TIP146

TIP142, TIP147

VCEO(sus)

60

80

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP140, TIP145

(VCE = 40 Vdc, IB = 0)

TIP141, TIP146

(VCE = 50 Vdc, IB = 0)

TIP142, TIP147

ICEO

−

2.0

mA

Collector Cutoff Current

(VCB = 60 V, IE = 0)

TIP140, TIP145

(VCB = 80 V, IE = 0)

TIP141, TIP146

(VCB = 100 V, IE = 0)

TIP142, TIP147

ICBO

−

1.0

mA

Emitter Cutoff Current (VBE = 5.0 V)

IEBO

−

2 0

mA

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 5.0 A, VCE = 4.0 V)

(IC = 10 A, VCE = 4.0 V)

hFE

1000

500

−

Collector−Emitter Saturation Voltage

(IC = 5.0 A, IB = 10 mA)

(IC = 10 A, IB = 40 mA)

VCE(sat)

−

2.0

3.0

Vdc

Base−Emitter Saturation Voltage

(IC = 10 A, IB = 40 mA)

VBE(sat)

−

3.5

Vdc

Base−Emitter On Voltage

(IC = 10 A, VCE = 4.0 Vdc)

VBE(on)

−

3.0

Vdc

SWITCHING CHARACTERISTICS

Resistive Load (See Figure 1)

Delay Time

(VCC = 30 V, IC = 5.0 A,

IB = 20 mA, Duty Cycle v 2.0%,

IB1 = IB2, RC & RB Varied, TJ = 25_C)

td

−

0.15

−

ms

Rise Time

tr

−

0.55

−

ms

Storage Time

ts

−

2.5

−

ms

Fall Time

tf

−

2.5

−

ms

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle v 2.0%.

Figure 1. Switching Times Test Circuit

10

0.2

Figure 2. Switching Times

IC, COLLECTOR CURRENT (AMP)

5.0

2.0

0.5

0.1

0.5

1.0

3.0

5.0

10

20

0.2

PNP

NPN

tf

tr

ts

td @ VBE(off) = 0

V2

approx

+12 V

V1

appox.

−8.0 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25

ms

0

RB

51

D1

+4.0 V

VCC

−30 V

RC

TUT

≈ 8.0 k

≈ 40

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

For NPN test circuit reverse diode and voltage polarities.

1.0

Аналогичный номер детали - TIP146

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	TIP146	204Kb / 4P	POWER TRANSISTORS(10A,60-100V,125W)
Central Semiconductor C...	TIP146	269Kb / 2P	SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS
Motorola, Inc	TIP146	234Kb / 6P	10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Comset Semiconductor	TIP146	74Kb / 3P	NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS
ON Semiconductor	TIP146	217Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1996 REV 1

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Аналогичное описание - TIP146

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	MJ2501	70Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	MJD112	84Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	BDX87C	70Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	SGSD100	894Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS October 2003
	TIP122FP	29Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
	TIP140	48Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
ON Semiconductor	TIP100	218Kb / 6P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 1995 REV 7
ON Semiconductor	MJ11017	235Kb / 6P	DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 1995
STMicroelectronics	BDW83C	67Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
STMicroelectronics	BDX53B	80Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Boca Semiconductor Corp...	2N6298	184Kb / 4P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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