поискавой системы для электроныых деталей |
|
FDD3N40 датащи(PDF) 2 Page - Fairchild Semiconductor |
|
FDD3N40 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page 2 www.fairchildsemi.com FDD3N40 / FDU3N40 Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 20mH, IAS = 2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD3N40 FDD3N40TM D-PAK 380mm 16mm 2500 FDD3N40 FDD3N40TF D-PAK 380mm 16mm 2000 FDU3N40 FDU3N40TU I-PAK - - 70 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 400 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C-- 0.4 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 400V, VGS = 0V VDS = 320V, TC = 125°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 1A -- 2.8 3.4 Ω gFS Forward Transconductance VDS = 40V, ID = 1A (Note 4) -- 2 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 173 225 pF Coss Output Capacitance -- 30 40 pF Crss Reverse Transfer Capacitance -- 3.7 6 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 200V, ID = 3A RG = 25Ω (Note 4, 5) -- 10 30 ns tr Turn-On Rise Time -- 30 70 ns td(off) Turn-Off Delay Time -- 10 30 ns tf Turn-Off Fall Time -- 25 60 ns Qg Total Gate Charge VDS = 320V, ID = 3A VGS = 10V (Note 4, 5) -- 4.5 6 nC Qgs Gate-Source Charge -- 1.2 -- nC Qgd Gate-Drain Charge -- 2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 8 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 3A dIF/dt =100A/µs (Note 4) -- 210 -- ns Qrr Reverse Recovery Charge -- 0.75 -- µC |
Аналогичный номер детали - FDD3N40 |
|
Аналогичное описание - FDD3N40 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |