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FDS8812NZ датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8812NZ датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page tm March 2007 ©2007 Fairchild Semiconductor Corporation FDS8812NZ Rev.C www.fairchildsemi.com 1 FDS8812NZ N-Channel PowerTrench® MOSFET 30V, 20A, 4.0m Ω Features Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A HBM ESD protection level of 6.4kV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Note 1a) 20 A -Pulsed 80 EAS Single Pulse Avalanche Energy (Note 4) 661 mJ PD Power Dissipation (Note 1a) 2.5 W Power Dissipation (Note 1b) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 125 Device Marking Device Reel Size Tape Width Quantity FDS8812NZ FDS8812NZ 13” 12mm 2500 units Pin 1 SO-8 D D D D S S S G D D D D G S S S |
Аналогичный номер детали - FDS8812NZ |
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Аналогичное описание - FDS8812NZ |
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