©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FQP6N40CF/FQPF6N40CF Rev. B

February 2006

FRFET

TM

FQP6N40CF/FQPF6N40CF

400V N-Channel MOSFET

Features

• Low gate charge ( typical 16nC)

• Low Crss ( typical 15pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Fast recovery body diode (typical 70ns)

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency switched mode power supplies, electronic lamp

ballasts based on half bridge topology.

Absolute Maximum Ratings

Thermal Characteristics

TO-220

FQP Series

G

S

D

TO-220F

FQPF Series

G

S

D

D

G

S

Symbol

Parameter

FQP6N40CF

FQPF6N40CF

Units

Drain-Source Voltage

400

V

Drain Current

6

6*

A

3.6

3.6*

A

Drain Current

- Pulsed

(Note 1)

24

24*

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

270

mJ

Avalanche Current

(Note 1)

6

A

Repetitive Avalanche Energy

(Note 1)

73

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

73

38

W

- Derate above 25°C

0.58

0.3

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

FQP6N40CF

FQPF6N40CF

Units

Thermal Resistance, Junction-to-Case

1.71

3.31

°C/W

Thermal Resistance, Case-to-Sink

0.5

--

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W

* Drain current limited by maximum junction temperature