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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TLC271AIP датащи(PDF) 2 Page - Texas Instruments |
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TLC271AIP датащи(HTML) 2 Page - Texas Instruments |
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2 / 82 page  TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 DEVICE FEATURES PARAMETER† BIAS-SELECT MODE UNIT PARAMETER† HIGH MEDIUM LOW UNIT PD 3375 525 50 µW SR 3.6 0.4 0.03 V/ µs Vn 25 32 68 nV/ √Hz B1 1.7 0.5 0.09 MHz AVD 23 170 480 V/mV † Typical at VDD = 5 V, TA = 25°C description (continued) Using the bias-select option, these cost-effective devices can be programmed to span a wide range of applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV) low-offset version. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs. In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications. The device inputs and output are designed to withstand – 100-mA surge currents without sustaining latch-up. The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The C-suffix devices are characterized for operation from 0 °C to 70°C. The I-suffix devices are characterized for operation from – 40 °C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of – 55 °C to 125°C. bias-select feature The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending on the level of performance desired. The tradeoffs between bias levels involve ac performance and power dissipation (see Table 1). Table 1. Effect of Bias Selection on Performance TYPICAL PARAMETER VALUES MODE TYPICAL PARAMETER VALUES TA = 25°C, VDD = 5V HIGH BIAS MEDIUM BIAS LOW BIAS UNIT TA = 25 C, VDD = 5 V RL = 10 kΩ RL = 100 kΩ RL = 1 MΩ PD Power dissipation 3.4 0.5 0.05 mW SR Slew rate 3.6 0.4 0.03 V/ µs Vn Equivalent input noise voltage at f = 1 kHz 25 32 68 nV/ √Hz B1 Unity-gain bandwidth 1.7 0.5 0.09 MHz φm Phase margin 46 ° 40 ° 34 ° AVD Large-signal differential voltage amplification 23 170 480 V/mV |
Аналогичный номер детали - TLC271AIP |
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Аналогичное описание - TLC271AIP |
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